Improving Off-State Breakdown Voltage of a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate
نویسندگان
چکیده
منابع مشابه
Design of normally-off GaN-based T-gate with Drain-Field-Plate (TGDFP) HEMT for power and RF applications
In this paper, an effective T-gate with Drain-Field-Plate (TGDFP) technology is used in GaN-based HEMT for high breakdown voltage of 500V and drain current of 540mA/mm. Silvaco TCAD simulation showed that normally-off TGDFP HEMT with recessed gate length of 0.5μm exhibited high threshold voltage up to +1V and transconductance of 140mS/mm along with frequency operation in Sband (∼3GHz). The prop...
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ژورنال
عنوان ژورنال: Solid State Electronics Letters
سال: 2020
ISSN: 2589-2088
DOI: 10.1016/j.ssel.2020.10.002